inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2083 description high dc current gain : h fe = 2000(min.)@ i c = 12a, v ce = 4v high collector-emitter breakdown voltage- : v (br)ceo = 120v(min) complement to type 2sb1383 applications designed for driver of solenoid, motor and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 6 v i c collector current-continuous 25 a i cm collector current-peak 40 a i b b base current- continuous 2 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2083 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma ,i b = 0 b 120 v v ce (sat) collector-emitter saturation voltage i c = 12a ,i b = 24ma 1.8 v v be (sat) base-emitter saturation voltage i c = 12a ,i b = 24ma 2.5 v i cbo collector cutoff current v cb = 120v, i e = 0 10 a i ebo emitter cutoff current v eb = 6v, i c = 0 10 ma h fe dc current gain i c = 12a ; v ce = 4v 2000 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 340 pf f t current-gain?bandwidth product i e = -1a ; v ce = 12v 20 mhz switching times t on turn-on time 1.0 s t stg storage time 6.0 s t f fall time i c = 12a,i b1 = -i b2 = 24ma; v cc = 24v, r l = 2 1.0 s isc website www.iscsemi.cn
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